PJQ5450-AU_R2_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 17+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
11 Stücke
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Technische Details PJQ5450-AU_R2_000A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5450-AU_R2_000A1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PJQ5450-AU_R2_000A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PJQ5450-AU_R2_000A1 | Panjit |
MOSFETs 40V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJQ5450-AU_R2_000A1 |
|
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJQ5450-AU_R2_000A1 |
|
Hersteller: Panjit
MOSFETs 40V N-Channel Enhancement Mode MOSFET
MOSFETs 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH