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PJQ5466A_R2_00001

PJQ5466A_R2_00001 Panjit International Inc.

PJQ5466A.pdf
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
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20+0.9 EUR
100+0.59 EUR
500+0.45 EUR
1000+0.41 EUR
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Technische Details PJQ5466A_R2_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V.

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PJQ5466A_R2_00001 PJQ5466A_R2_00001 Panjit International Inc. PJQ5466A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A_R2_00001 PJQ5466A_R2_00001 Panjit PJQ5466A-1867612.pdf MOSFET PJ/Q5466A/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-60FKMN//PJ/DFN50608L-AS30/DFN50608L-AS06/DFN50608L-AS01
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A_R2_00001 PJQ5466A.pdf
PJQ5466A_R2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A_R2_00001 PJQ5466A-1867612.pdf
PJQ5466A_R2_00001
Hersteller: Panjit
MOSFET PJ/Q5466A/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-60FKMN//PJ/DFN50608L-AS30/DFN50608L-AS06/DFN50608L-AS01
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH