
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.10 EUR |
10+ | 2.85 EUR |
100+ | 2.06 EUR |
500+ | 1.69 EUR |
1000+ | 1.57 EUR |
6000+ | 1.52 EUR |
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Technische Details PJQ5540V-AU_R2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060X-8L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5540V-AU_R2_002A1 nach Preis ab 1.65 EUR bis 4.19 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PJQ5540V-AU_R2_002A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2730 Stücke: Lieferzeit 10-14 Tag (e) |
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PJQ5540V-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
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Produkt ist nicht verfügbar |
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PJQ5540V-AU_R2_002A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |