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PJQ5540V-AU_R2_002A1

PJQ5540V-AU_R2_002A1 Panjit

PJQ5540V_AU-3239240.pdf Hersteller: Panjit
MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Technische Details PJQ5540V-AU_R2_002A1 Panjit

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060X-8L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V, Qualification: AEC-Q101.

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PJQ5540V-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ5540V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.91 EUR
100+2.11 EUR
500+1.79 EUR
1000+1.65 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5540V-AU_R2_002A1 Hersteller : PanJit Semiconductor PJQ5540V-AU.pdf PJQ5540V-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5540V-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ5540V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH