| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.15 EUR |
| 3000+ | 1.06 EUR |
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Technische Details PJQ5542V-AU_R2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Grade: Automotive, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 3.5V @ 50µA, Power Dissipation (Max): 3.3W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJQ5542V-AU_R2_002A1 nach Preis ab 1.26 EUR bis 3.34 EUR
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PJQ5542V-AU_R2_002A1 | Panjit International Inc. |
 Description: 40V N-CHANNEL ENHANCEMENT MODE MQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 3.5V @ 50µA Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5542V-AU_R2_002A1 |
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Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.26 EUR |