| Anzahl | Preis |
|---|---|
| 2+ | 2.8 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| 3000+ | 0.95 EUR |
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Technische Details PJQ5544V-AU_R2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Grade: Automotive, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 3.5V @ 50µA, Power Dissipation (Max): 3.3W (Ta), 94W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V.
Weitere Produktangebote PJQ5544V-AU_R2_002A1 nach Preis ab 1.14 EUR bis 3.06 EUR
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PJQ5544V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MDrive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 3.5V @ 50µA Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc) FET Type: N-Channel Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJQ5544V-AU_R2_002A1 |
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Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.14 EUR |


