PJQ5606_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 7A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
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Technische Details PJQ5606_R2_00001 Panjit International Inc.
Description: MOSFET N/P-CH 30V 7A 8DFN, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: DFN5060B-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V, Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.7W (Ta), 21W (Tc), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote PJQ5606_R2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PJQ5606_R2_00001 | Panjit International Inc. |
Description: MOSFET N/P-CH 30V 7A 8DFN Supplier Device Package: DFN5060B-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.7W (Ta), 21W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJQ5606_R2_00001 | Panjit |
MOSFET PJ/Q5606/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-30FKNP//PJ/DFN5060B8L-AS04/PJQ5606-ASN3/DFN50608L-AS01 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
PJQ5606-R2-00001 | Panjit | MOSFETs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJQ5606_R2_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 30V 7A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 7A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJQ5606_R2_00001 |
|
Hersteller: Panjit
MOSFET PJ/Q5606/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-30FKNP//PJ/DFN5060B8L-AS04/PJQ5606-ASN3/DFN50608L-AS01
MOSFET PJ/Q5606/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-30FKNP//PJ/DFN5060B8L-AS04/PJQ5606-ASN3/DFN50608L-AS01
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJQ5606-R2-00001 |
Hersteller: Panjit
MOSFETs
MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH