PJQ5948-AU_R2_002A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: MOSFET 2N-CH 40V 10.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060B-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 12+ | 1.49 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.80 EUR |
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Technische Details PJQ5948-AU_R2_002A1 Panjit International Inc.
Description: MOSFET 2N-CH 40V 10.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 30W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V, Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: DFN5060B-8, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5948-AU_R2_002A1 nach Preis ab 0.72 EUR bis 1.85 EUR
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PJQ5948-AU_R2_002A1 | Hersteller : Panjit |
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PJQ5948-AU_R2_002A1 | Hersteller : Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060B-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |