PJS6403_S1_00001 Panjit International Inc.
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
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Technische Details PJS6403_S1_00001 Panjit International Inc.
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6, Case: SOT23-6, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain current: -6.4A, Pulsed drain current: -46A, Drain-source voltage: -30V, Gate charge: 7.8nC, On-state resistance: 46mΩ, Power dissipation: 2W, Gate-source voltage: ±20V, Kind of package: reel; tape.
Weitere Produktangebote PJS6403_S1_00001
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PJS6403_S1_00001 | Hersteller : Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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PJS6403_S1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6 Case: SOT23-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -6.4A Pulsed drain current: -46A Drain-source voltage: -30V Gate charge: 7.8nC On-state resistance: 46mΩ Power dissipation: 2W Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |