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PJS6417_S1_00001

PJS6417_S1_00001 Panjit International Inc.

PJS6417.pdf Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
Mindestbestellmenge: 3000
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Technische Details PJS6417_S1_00001 Panjit International Inc.

Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V.

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PJS6417_S1_00001 PJS6417_S1_00001 Hersteller : Panjit PJS6417-1871249.pdf MOSFET 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.67 EUR
10+ 0.58 EUR
100+ 0.4 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 5
PJS6417_S1_00001 PJS6417_S1_00001 Hersteller : Panjit International Inc. PJS6417.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
auf Bestellung 5707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
PJS6417-S1-00001 PJS6417-S1-00001 Hersteller : Panjit PJS6417-1871249.pdf MOSFET SOT-23 6L-1/MOS/NFET-20TLMP
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