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PJS6601-AU_S1_000A1

PJS6601-AU_S1_000A1 Panjit International Inc.

PJS6601-AU.pdf
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
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24+0.88 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.39 EUR
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Technische Details PJS6601-AU_S1_000A1 Panjit International Inc.

Description: MOSFET N/P-CH 20V 4.1A SOT23-6, Part Status: Active, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

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PJS6601-AU_S1_000A1 PJS6601-AU_S1_000A1 Panjit International Inc. PJS6601-AU.pdf Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJS6601-AU_S1_000A1 PJS6601-AU_S1_000A1 Panjit PJS6601_AU-1871563.pdf MOSFET 20V Complementary Enhancement Mode MOSFET
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PJS6601-AU-S1-000A1 PJS6601-AU-S1-000A1 Panjit PJS6601_AU-1871563.pdf MOSFET SOT23-6L/MOS/SOT/NFET-20TLNP
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Im Einkaufswagen  Stück im Wert von  UAH
PJS6601-AU_S1_000A1 PJS6601-AU.pdf
PJS6601-AU_S1_000A1
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601-AU_S1_000A1 PJS6601_AU-1871563.pdf
PJS6601-AU_S1_000A1
Hersteller: Panjit
MOSFET 20V Complementary Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601-AU-S1-000A1 PJS6601_AU-1871563.pdf
PJS6601-AU-S1-000A1
Hersteller: Panjit
MOSFET SOT23-6L/MOS/SOT/NFET-20TLNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH