
PJS6601-AU_S1_000A1 Panjit International Inc.

Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
15+ | 1.20 EUR |
24+ | 0.74 EUR |
100+ | 0.48 EUR |
500+ | 0.36 EUR |
1000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJS6601-AU_S1_000A1 Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote PJS6601-AU_S1_000A1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
PJS6601-AU_S1_000A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
![]() |
PJS6601-AU_S1_000A1 | Hersteller : Panjit |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
PJS6601-AU-S1-000A1 | Hersteller : Panjit |
![]() |
Produkt ist nicht verfügbar |