PJS6812_S1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
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Technische Details PJS6812_S1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V, Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual).
Weitere Produktangebote PJS6812_S1_00001 nach Preis ab 0.22 EUR bis 0.74 EUR
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PJS6812_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 10473 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJS6812_S1_00001 |
|
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 10473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.22 EUR |