PJS6832_S2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 1.6A SOT23-6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
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Technische Details PJS6832_S2_00001 Panjit International Inc.
Description: MOSFET 2N-CH 30V 1.6A SOT23-6, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W (Ta).
Weitere Produktangebote PJS6832_S2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJS6832_S2_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 30V 1.6A SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PJS6832_S2_00001 | Panjit |
MOSFET 30V N-Channel Enhancement Mode MOSFETESD Protected |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJS6832_S2_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 1.6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6
Description: MOSFET 2N-CH 30V 1.6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJS6832_S2_00001 |
|
Hersteller: Panjit
MOSFET 30V N-Channel Enhancement Mode MOSFETESD Protected
MOSFET 30V N-Channel Enhancement Mode MOSFETESD Protected
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH