PJS6833_S2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 30V 1.1A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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Technische Details PJS6833_S2_00001 Panjit International Inc.
Description: MOSFET 2P-CH 30V 1.1A SOT23-6, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJS6833_S2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJS6833_S2_00001 | Panjit International Inc. |
Description: MOSFET 2P-CH 30V 1.1A SOT23-6 Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PJS6833_S2_00001 | Panjit |
MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJS6833_S2_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 30V 1.1A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 1.1A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJS6833_S2_00001 |
|
Hersteller: Panjit
MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH