PJT7601_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details PJT7601_R1_00001 Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, 1.2V Drive, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJT7601_R1_00001 nach Preis ab 0.19 EUR bis 1.03 EUR
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PJT7601_R1_00001 | Panjit International Inc. |
Description: 20V COMPLEMENTARY ENHANCEMENT MOFET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA |
auf Bestellung 8421 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7601_R1_00001 | Panjit |
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected |
auf Bestellung 3352 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJT7601_R1_00001 |
![]() |
Hersteller: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: 20V COMPLEMENTARY ENHANCEMENT MO
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 8421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
| PJT7601_R1_00001 |
![]() |
Hersteller: Panjit
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |


