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PJT7603_R1_00001

PJT7603_R1_00001 Panjit International Inc.

PJT7603.pdf Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 50V 0.4A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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Technische Details PJT7603_R1_00001 Panjit International Inc.

Description: MOSFET N/P-CH 50V 0.4A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA, Supplier Device Package: SOT-363.

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PJT7603_R1_00001 PJT7603_R1_00001 Hersteller : Panjit PJT7603-1869090.pdf MOSFETs Complementary Enhancement Mode MOSFETESD Protected
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6+0.5 EUR
10+0.34 EUR
100+0.18 EUR
1000+0.16 EUR
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9000+0.11 EUR
24000+0.1 EUR
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PJT7603_R1_00001 PJT7603_R1_00001 Hersteller : Panjit International Inc. PJT7603.pdf Description: MOSFET N/P-CH 50V 0.4A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 8978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
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PJT7603_R1_00001 Hersteller : PanJit Semiconductor PJT7603.pdf PJT7603-R1 Multi channel transistors
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
200+0.36 EUR
869+0.082 EUR
918+0.078 EUR
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PJT7603-R1-00001 PJT7603-R1-00001 Hersteller : Panjit PJT7603-1869090.pdf MOSFET SOT-363/MOS/SOT/NFET-60TSNP
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