PJT7828_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.3A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 30V 0.3A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
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Technische Details PJT7828_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.3A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote PJT7828_R1_00001 nach Preis ab 0.1 EUR bis 0.74 EUR
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PJT7828_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET 2N-CH 30V 0.3A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 3605 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7828_R1_00001 | Hersteller : Panjit |
MOSFET 30V N-Channel Enhancement Mode MOSFET |
auf Bestellung 4518 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT7828_R1_00001 | Hersteller : PanJit | Trans MOSFET N-CH 30V 0.3A 6-Pin SOT-363 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7828_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; Idm: 0.6A; 350mW Kind of package: reel; tape Type of transistor: N-MOSFET x2 Case: SOT363 Mounting: SMD Gate charge: 0.9nC Drain current: 0.3A Power dissipation: 0.35W Pulsed drain current: 0.6A On-state resistance: 4Ω Gate-source voltage: ±10V Drain-source voltage: 30V Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |


