PJW4P06A-AU_R2_007A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 146+ | 0.49 EUR |
| 229+ | 0.31 EUR |
| 272+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJW4P06A-AU_R2_007A1 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -4A, Case: SOT223, Gate-source voltage: ±20V, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: -16A, Application: automotive industry, Gate charge: 10nC, On-state resistance: 0.13Ω, Power dissipation: 3.1W.
Weitere Produktangebote PJW4P06A-AU_R2_007A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PJW4P06A-AU_R2_007A1 | Hersteller : Panjit |
MOSFETs 60V P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |