PJX8601_R1_00001 Panjit
| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| 4000+ | 0.12 EUR |
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Technische Details PJX8601_R1_00001 Panjit
Description: MOSFET N/P-CH 20V 0.5A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 300mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJX8601_R1_00001 nach Preis ab 0.19 EUR bis 0.81 EUR
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PJX8601_R1_00001 | Panjit International Inc. |
 Description: MOSFET N/P-CH 20V 0.5A SOT563Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 300mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA |
auf Bestellung 2895 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJX8601_R1_00001 |
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Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 20V 0.5A SOT563
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Description: MOSFET N/P-CH 20V 0.5A SOT563
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |