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PJX8603_R1_00001

PJX8603_R1_00001 Panjit International Inc.

PJX8603.pdf
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.12 EUR
12000+0.1 EUR
Mindestbestellmenge: 4000 Stücke
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Technische Details PJX8603_R1_00001 Panjit International Inc.

Description: MOSFET N/P-CH 50V/60V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 50V, 60V, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA, Supplier Device Package: SOT-563.

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PJX8603_R1_00001 PJX8603_R1_00001 Panjit International Inc. PJX8603.pdf Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 23920 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.58 EUR
58+0.37 EUR
81+0.26 EUR
100+0.23 EUR
500+0.17 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 Panjit E299B70BA4D3C7240394CB3AAFF1D06E1474878B2CDCD731A348F0EA2F6A2E10.pdf MOSFETs Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.64 EUR
11+0.29 EUR
100+0.25 EUR
500+0.18 EUR
4000+0.15 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 PanJit PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 23920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
58+0.37 EUR
81+0.26 EUR
100+0.23 EUR
500+0.17 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 E299B70BA4D3C7240394CB3AAFF1D06E1474878B2CDCD731A348F0EA2F6A2E10.pdf
PJX8603_R1_00001
Hersteller: Panjit
MOSFETs Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.64 EUR
11+0.29 EUR
100+0.25 EUR
500+0.18 EUR
4000+0.15 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH