PJX8803_R1_00001 Panjit
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.69 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 4000+ | 0.15 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5 Stücke
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Technische Details PJX8803_R1_00001 Panjit
Description: MOSFET 2P-CH 20V 0.6A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V, Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote PJX8803_R1_00001 nach Preis ab 0.23 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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PJX8803_R1_00001 | Panjit International Inc. |
 Description: MOSFET 2P-CH 20V 0.6A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJX8803_R1_00001 |
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Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.6A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 20V 0.6A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 44+ | 0.48 EUR |
| 61+ | 0.35 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |