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PJX8803_R1_00001

PJX8803_R1_00001 Panjit

PJX8803-1869276.pdf Hersteller: Panjit
MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 3920 Stücke:
Lieferzeit 10-14 Tag (e)
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5+0.67 EUR
10+0.45 EUR
100+0.24 EUR
1000+0.19 EUR
4000+0.15 EUR
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Technische Details PJX8803_R1_00001 Panjit

Description: MOSFET 2P-CH 20V 0.6A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V, Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563.

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PJX8803_R1_00001 PJX8803_R1_00001 Hersteller : Panjit International Inc. PJX8803.pdf Description: MOSFET 2P-CH 20V 0.6A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 3325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PJX8803_R1_00001 PJX8803_R1_00001 Hersteller : Panjit International Inc. PJX8803.pdf Description: MOSFET 2P-CH 20V 0.6A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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Im Einkaufswagen  Stück im Wert von  UAH