PJX8828_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 42+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
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Technische Details PJX8828_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.3A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote PJX8828_R1_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PJX8828_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 30V 0.3A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PJX8828_R1_00001 | Panjit |
MOSFET 30V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJX8828-R1-00001 | Panjit |
MOSFET SOT-563/MOS/SOT/NFET-30TEMN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJX8828_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJX8828_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJX8828_R1_00001 |
|
Hersteller: Panjit
MOSFET 30V N-Channel Enhancement Mode MOSFET
MOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJX8828-R1-00001 |
|
Hersteller: Panjit
MOSFET SOT-563/MOS/SOT/NFET-30TEMN
MOSFET SOT-563/MOS/SOT/NFET-30TEMN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJX8828_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH