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PJX8838_R1_00001

PJX8838_R1_00001 Panjit International Inc.

PJX8838.pdf
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.19 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJX8838_R1_00001 Panjit International Inc.

Description: MOSFET 2N-CH 50V 0.36A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJX8838_R1_00001 PJX8838_R1_00001 Panjit 9961E82554985B28C0A7C37D0AA591339308A176981E35BE0F72FA3D979300DA.pdf MOSFETs 50V N-Channel Enhancement Mode MOSFET ESD Protected
auf Bestellung 5686 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.87 EUR
10+0.54 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.2 EUR
4000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8838_R1_00001 PJX8838_R1_00001 Panjit International Inc. PJX8838.pdf Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 7665 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.2 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8838_R1_00001 9961E82554985B28C0A7C37D0AA591339308A176981E35BE0F72FA3D979300DA.pdf
PJX8838_R1_00001
Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFET ESD Protected
auf Bestellung 5686 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.87 EUR
10+0.54 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.2 EUR
4000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8838_R1_00001 PJX8838.pdf
PJX8838_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 7665 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.2 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH