PMBT3906/TE1215 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT23-3 (TO-236)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Active
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 15000+ | 0.032 EUR |
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Technische Details PMBT3906/TE1215 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: SOT23-3 (TO-236), Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Part Status: Active, Packaging: Bulk.