| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.44 EUR |
| 10+ | 0.88 EUR |
| 50+ | 0.64 EUR |
| 100+ | 0.57 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.33 EUR |
| 5000+ | 0.3 EUR |
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Technische Details PMCB60XNEZ Nexperia
Description: PMCB60XNE/SOT8026/DSN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DSN1006-3, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 480mW (Ta), 7W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote PMCB60XNEZ nach Preis ab 0.58 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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PMCB60XNEZ | Nexperia USA Inc. |
 Description: PMCB60XNE/SOT8026/DSN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V Power Dissipation (Max): 480mW (Ta), 7W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V |
auf Bestellung 5493 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMCB60XNEZ |
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Hersteller: Nexperia USA Inc.
Description: PMCB60XNE/SOT8026/DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
Description: PMCB60XNE/SOT8026/DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 480mW (Ta), 7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.46 EUR |
| 23+ | 0.92 EUR |
| 50+ | 0.67 EUR |
| 100+ | 0.58 EUR |