Produktrezensionen
Produktbewertung abgeben
Technische Details PMCM440VNEZ Nexperia
Description: MOSFET N-CH 12V 3.9A 4WLCSP, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Obsolete, Supplier Device Package: 4-WLCSP (0.78x0.78), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 400mW (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, WLCSP, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V.
Weitere Produktangebote PMCM440VNEZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PMCM440VNEZ | Nexperia USA Inc. |
 Description: MOSFET N-CH 12V 3.9A 4WLCSPGate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Obsolete Supplier Device Package: 4-WLCSP (0.78x0.78) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
PMCM440VNEZ | Nexperia USA Inc. |
Description: MOSFET N-CH 12V 3.9A 4WLCSP Part Status: Obsolete Supplier Device Package: 4-WLCSP (0.78x0.78) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMCM440VNEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 3.9A 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V
Description: MOSFET N-CH 12V 3.9A 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMCM440VNEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 3.9A 4WLCSP
Part Status: Obsolete
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Description: MOSFET N-CH 12V 3.9A 4WLCSP
Part Status: Obsolete
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH