PMCM6501VNEZ NXP USA Inc.

Description: PMCM6501VNE - 12V, N-CHANNEL TRE, Packaging: Bulk, Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 3A, 4.5V, Power Dissipation (Max): 556mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-WLCSP (1.48x0.98), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 6 V.