| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.3 EUR |
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Technische Details PMCM6501VPEZ Nexperia
Description: MOSFET P-CH 12V 6.2A 6WLCSP, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-WLCSP (1.48x0.98), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 556mW (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-XFBGA, WLCSP, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMCM6501VPEZ nach Preis ab 0.41 EUR bis 1.62 EUR
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PMCM6501VPEZ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 12V 6.2A 6WLCSPInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-WLCSP (1.48x0.98) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 556mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 4435 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM6501VPEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 12V 6.2A 6WLCSP Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-WLCSP (1.48x0.98) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 556mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |