Produkte > Transistoren > Bipolar-Transistoren NPN > PMCPB5530X,115 Transistor

PMCPB5530X,115 Transistor


Produktcode: 197783
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Hersteller:
Transistoren > Bipolar-Transistoren NPN

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Weitere Produktangebote PMCPB5530X,115 Transistor

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PMCPB5530X,115 PMCPB5530X,115 Nexperia USA Inc. PMCPB5530X.pdf Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMCPB5530X,115 PMCPB5530X,115 Nexperia USA Inc. PMCPB5530X.pdf Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMCPB5530X,115 PMCPB5530X,115 Nexperia PMCPB5530X.pdf MOSFETs PMCPB5530X/SOT1118/HUSON6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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PMCPB5530X,115 PMCPB5530X.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMCPB5530X,115 PMCPB5530X.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMCPB5530X,115 PMCPB5530X.pdf
Hersteller: Nexperia
MOSFETs PMCPB5530X/SOT1118/HUSON6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH