| Anzahl | Preis |
|---|---|
| 4+ | 0.91 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.22 EUR |
| 2500+ | 0.21 EUR |
| 5000+ | 0.18 EUR |
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Technische Details PMCXB1000UEZ Nexperia
Description: MOSFET N/P-CH 30V 0.59A 6DFN, Part Status: Active, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V, Power - Max: 285mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta), Drain to Source Voltage (Vdss): 30V.
Weitere Produktangebote PMCXB1000UEZ nach Preis ab 0.42 EUR bis 1.06 EUR
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PMCXB1000UEZ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N/P-CH 30V 0.59A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 285mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V |
auf Bestellung 1412 Stücke: Lieferzeit 10-14 Tag (e) |
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