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PMCXB290UEZ Nexperia USA Inc.


PMCXB290UE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.93A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW (Ta), 6W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010B-6
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Technische Details PMCXB290UEZ Nexperia USA Inc.

Description: MOSFET N/P-CH 20V 0.93A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 280mW (Ta), 6W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V, Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1010B-6.

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PMCXB290UEZ PMCXB290UEZ Nexperia USA Inc. PMCXB290UE.pdf Description: MOSFET N/P-CH 20V 0.93A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW (Ta), 6W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010B-6
Produkt ist nicht verfügbar
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PMCXB290UEZ PMCXB290UEZ Nexperia PMCXB290UE.pdf MOSFETs SOT1216 NPCH 20V .93A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMCXB290UEZ PMCXB290UE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.93A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW (Ta), 6W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010B-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMCXB290UEZ PMCXB290UE.pdf
Hersteller: Nexperia
MOSFETs SOT1216 NPCH 20V .93A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH