PMDPB38UNE,115 NXP
Hersteller: NXP
Description: NXP - PMDPB38UNE,115 - INTEGRATED PASSIVE FILTERS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details PMDPB38UNE,115 NXP
Description: MOSFET 2N-CH 20V 4A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Weitere Produktangebote PMDPB38UNE,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PMDPB38UNE,115 | NXP USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMDPB38UNE,115 |
|
Hersteller: NXP USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH