PMDPB56XN,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 30V 3.1A 6HUSON
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1092+ | 0.44 EUR |
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Technische Details PMDPB56XN,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6HUSON, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V, Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Weitere Produktangebote PMDPB56XN,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| PMDPB56XN,115 | Hersteller : NXP |
Description: NXP - PMDPB56XN,115 - INTEGRATED PASSIVE FILTERS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |