Produkte > NEXPERIA > PMEG150G10ELR-QX
PMEG150G10ELR-QX

PMEG150G10ELR-QX Nexperia


PMEG150G10ELR_Q-2498333.pdf
Hersteller: Nexperia
Rectifiers PMEG150G10ELR-Q/SOD123W/SOD2
auf Bestellung 2873 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.47 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.2 EUR
3000+0.17 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PMEG150G10ELR-QX Nexperia

Description: DIODE SIGE 150V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 15 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 34pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 150 V, Qualification: AEC-Q101.

Weitere Produktangebote PMEG150G10ELR-QX nach Preis ab 0.2 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PMEG150G10ELR-QX PMEG150G10ELR-QX Hersteller : Nexperia USA Inc. Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 1005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
PMEG150G10ELR-QX PMEG150G10ELR-QX Hersteller : Nexperia USA Inc. Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH