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PMEG200G10ELRX

PMEG200G10ELRX NEXPERIA


pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC64AB36AD20C7&compId=PMEG200G10ELR.pdf?ci_sign=31de6891fb847dff730d30730399ac00c1b1fea6 Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 34ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 40A
Leakage current: 30nA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
25+2.86 EUR
100+0.72 EUR
102+0.7 EUR
280+0.26 EUR
3000+0.15 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMEG200G10ELRX NEXPERIA

Description: DIODE SIGE 200V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 34 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 29pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V.

Weitere Produktangebote PMEG200G10ELRX nach Preis ab 11.91 EUR bis 11.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PMEG200G10ELRX PMEG200G10ELRX Hersteller : NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC64AB36AD20C7&compId=PMEG200G10ELR.pdf?ci_sign=31de6891fb847dff730d30730399ac00c1b1fea6 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 34ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 40A
Leakage current: 30nA
Kind of package: reel; tape
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PMEG200G10ELRX Hersteller : NEXPERIA pmeg200g10elr.pdf Rectifier Diode Switching SiGe 1.4A 34ns Automotive 2-Pin SOD-123W T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG200G10ELRX PMEG200G10ELRX Hersteller : Nexperia USA Inc. Description: DIODE SIGE 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 29pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG200G10ELRX PMEG200G10ELRX Hersteller : Nexperia USA Inc. Description: DIODE SIGE 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 29pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG200G10ELRX PMEG200G10ELRX Hersteller : Nexperia PMEG200G10ELR-2938539.pdf Rectifiers PMEG200G10ELR/SOD123W/SOD2
Produkt ist nicht verfügbar
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