PMEG200G10ELRX NEXPERIA
Hersteller: NEXPERIACategory: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 200V
Max. forward voltage: 0.805V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 34ns
Max. forward impulse current: 40A
Leakage current: 30nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 102+ | 0.70 EUR |
| 280+ | 0.26 EUR |
| 3000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMEG200G10ELRX NEXPERIA
Description: DIODE SIGE 200V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 34 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 29pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V.
Weitere Produktangebote PMEG200G10ELRX nach Preis ab 11.91 EUR bis 11.91 EUR
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PMEG200G10ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Mounting: SMD Case: SOD123W Max. off-state voltage: 200V Max. forward voltage: 0.805V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 34ns Max. forward impulse current: 40A Leakage current: 30nA |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG200G10ELRX | Hersteller : Nexperia USA Inc. |
Description: DIODE SIGE 200V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 29pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V |
Produkt ist nicht verfügbar |
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PMEG200G10ELRX | Hersteller : Nexperia USA Inc. |
Description: DIODE SIGE 200V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 29pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V |
Produkt ist nicht verfügbar |
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PMEG200G10ELRX | Hersteller : Nexperia |
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