PMEG200G20ELR-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 58pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 58pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 0.77 EUR |
| 30+ | 0.75 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMEG200G20ELR-QX Nexperia USA Inc.
Description: DIODE GEN PURP 200V 2A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 32 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 58pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote PMEG200G20ELR-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
PMEG200G20ELR-QX | Hersteller : Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 58pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
 |
PMEG200G20ELR-QX | Hersteller : Nexperia |
 Rectifiers PMEG200G20ELR-Q/SOD123W/SOD2 |
Produkt ist nicht verfügbar |