PMEG200G20ELRX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 58pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Description: DIODE SIGE 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 58pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
| 15000+ | 0.17 EUR |
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Technische Details PMEG200G20ELRX Nexperia USA Inc.
Description: DIODE SIGE 200V 2A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 32 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 58pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V.
Weitere Produktangebote PMEG200G20ELRX nach Preis ab 0.17 EUR bis 0.72 EUR
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PMEG200G20ELRX | Hersteller : Nexperia USA Inc. |
Description: DIODE SIGE 200V 2A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 58pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V |
auf Bestellung 17137 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG200G20ELRX | Hersteller : Nexperia |
 Rectifiers PMEG200G20ELR/SOD123W/SOD2 |
auf Bestellung 36914 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMEG200G20ELRX | Hersteller : NEXPERIA |
Rectifier Diode Switching SiGe 2.8A 32ns Automotive 2-Pin SOD-123W |
Produkt ist nicht verfügbar |
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PMEG200G20ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 32ns; SOD123W; Ufmax: 0.805V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. forward voltage: 0.805V Max. forward impulse current: 70A Leakage current: 30nA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMEG200G20ELRX | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 32ns; SOD123W; Ufmax: 0.805V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. forward voltage: 0.805V Max. forward impulse current: 70A Leakage current: 30nA Kind of package: reel; tape |
Produkt ist nicht verfügbar |