| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.36 EUR |
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Technische Details PMEG200G30ELP-QX Nexperia
Description: DIODE SIGE 200V 3A SOD128/CFP5, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 31 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 80pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: SOD-128/CFP5, Operating Temperature - Junction: 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote PMEG200G30ELP-QX nach Preis ab 0.56 EUR bis 1.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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PMEG200G30ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 200V 3A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 80pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMEG200G30ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 200V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE SIGE 200V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.56 EUR |