PMEG2010EPASX NXP Semiconductors
Hersteller: NXP Semiconductors
Description: DIODE SCHOTTKY 20V 1A DFN2020D-3
Packaging: Bulk
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN2020D-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 375 mV @ 1 A
Current - Reverse Leakage @ Vr: 335 µA @ 20 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1013+ | 0.45 EUR |
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Technische Details PMEG2010EPASX NXP Semiconductors
Description: DIODE SCHOTTKY 20V 1A DFN2020D-3, Packaging: Bulk, Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Schottky, Capacitance @ Vr, F: 175pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DFN2020D-3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 375 mV @ 1 A, Current - Reverse Leakage @ Vr: 335 µA @ 20 V, Qualification: AEC-Q101.
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