PMEG2010EPK-QYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: DIODE SCHOTTKY 20V 1A DFN1608D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
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Technische Details PMEG2010EPK-QYL Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A DFN1608D2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Schottky, Capacitance @ Vr, F: 65pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DFN1608D-2, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A, Current - Reverse Leakage @ Vr: 600 µA @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
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Description: DIODE SCHOTTKY 20V 1A DFN1608D2 Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Schottky Capacitance @ Vr, F: 65pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A Current - Reverse Leakage @ Vr: 600 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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