PMEG3010AESBYL Nexperia
| Anzahl | Preis |
|---|---|
| 14+ | 0.21 EUR |
| 24+ | 0.12 EUR |
| 100+ | 0.1 EUR |
| 500+ | 0.092 EUR |
| 5000+ | 0.088 EUR |
| 10000+ | 0.067 EUR |
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Technische Details PMEG3010AESBYL Nexperia
Description: DIODE SCHOTTKY 30V 1A DSN1006-2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.5 ns, Technology: Schottky, Capacitance @ Vr, F: 86pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A, Current - Reverse Leakage @ Vr: 255 µA @ 20 V.
Weitere Produktangebote PMEG3010AESBYL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PMEG3010AESBYL | Hersteller : NXP/Nexperia/We-En |
 Діод Шотткі smd, Io, A = 1, Uзвор, В = 30, Uf (max), В = 0,48, If, А = 1, C, пФ @ Ur, В, F, МГц = 86 @ 1, 1 кГц, trr, нс = 3,5 мс, Тексп, °C = -55...+150, I, мкА @ Ur, В = 255 @ 20,... Група товару: Діоди Корпус: SOD-993 Од. вим: 200Anzahl je Verpackung: 1 Stücke |
verfügbar 44 Stücke: |