PMEG4010ESBYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
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Technische Details PMEG4010ESBYL Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.9 ns, Technology: Schottky, Capacitance @ Vr, F: 22pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A, Current - Reverse Leakage @ Vr: 40 µA @ 40 V.
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PMEG4010ESBYL | Hersteller : Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 1A DSN1006-2 Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.9 ns Technology: Schottky Capacitance @ Vr, F: 22pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A Current - Reverse Leakage @ Vr: 40 µA @ 40 V |
Produkt ist nicht verfügbar |
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PMEG4010ESBYL | Hersteller : Nexperia |
Schottky Diodes & Rectifiers PMEG4010ESB/SOD993/DSN1006-2 |
Produkt ist nicht verfügbar |