PMEG4020EPK,315 Nexperia
| Anzahl | Preis |
|---|---|
| 6+ | 0.47 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 5000+ | 0.12 EUR |
| 8000+ | 0.097 EUR |
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Technische Details PMEG4020EPK,315 Nexperia
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 5 µA @ 10 V, Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 40 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: DFN1608D-2, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 90pF @ 1V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-XDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMEG4020EPK,315 nach Preis ab 0.17 EUR bis 0.65 EUR
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PMEG4020EPK,315 | Nexperia USA Inc. |
 Description: DIODE SCHOTTKY 40V 2A DFN1608D-2Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 90pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMEG4020EPK,315 | NXP/Nexperia/We-En |
Діод Шотткі smd, Io, A = 2, Uзвор, В = 40, Uf (max), В = 0,66, If, А = 2, C, пФ @ Ur, В, F, МГц = 90 @ 1, 1, trr, нс = 500, Р, Вт = 1,565, Тексп, °C = -55...+150, I, мкА @ Ur, В = 5 @ 10,... Діоди Корпус: XDFN-2 Од. вим: шт Anzahl je Verpackung: 8000 Stücke |
verfügbar 5 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| PMEG4020EPK,315 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 45+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| PMEG4020EPK,315 |
|
Hersteller: NXP/Nexperia/We-En
Діод Шотткі smd, Io, A = 2, Uзвор, В = 40, Uf (max), В = 0,66, If, А = 2, C, пФ @ Ur, В, F, МГц = 90 @ 1, 1, trr, нс = 500, Р, Вт = 1,565, Тексп, °C = -55...+150, I, мкА @ Ur, В = 5 @ 10,... Діоди Корпус: XDFN-2 Од. вим: шт
Anzahl je Verpackung: 8000 Stücke
Діод Шотткі smd, Io, A = 2, Uзвор, В = 40, Uf (max), В = 0,66, If, А = 2, C, пФ @ Ur, В, F, МГц = 90 @ 1, 1, trr, нс = 500, Р, Вт = 1,565, Тексп, °C = -55...+150, I, мкА @ Ur, В = 5 @ 10,... Діоди Корпус: XDFN-2 Од. вим: шт
Anzahl je Verpackung: 8000 Stücke
verfügbar 5 Stücke: