PMG85XPH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2A, 4.5V
Power Dissipation (Max): 375mW (Ta), 2.4W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
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Technische Details PMG85XPH Nexperia USA Inc.
Description: MOSFET P-CH 20V 2A 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tj), Rds On (Max) @ Id, Vgs: 115mOhm @ 2A, 4.5V, Power Dissipation (Max): 375mW (Ta), 2.4W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 6-TSSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V.
Weitere Produktangebote PMG85XPH nach Preis ab 0.14 EUR bis 0.82 EUR
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PMG85XPH | Nexperia |
MOSFETs SOT363 P-CH 20V 2A |
auf Bestellung 3045 Stücke: Lieferzeit 10-14 Tag (e) |
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PMG85XPH | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 115mOhm @ 2A, 4.5V Power Dissipation (Max): 375mW (Ta), 2.4W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-TSSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMG85XPH |
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Hersteller: Nexperia
MOSFETs SOT363 P-CH 20V 2A
MOSFETs SOT363 P-CH 20V 2A
auf Bestellung 3045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.67 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |
| PMG85XPH |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2A, 4.5V
Power Dissipation (Max): 375mW (Ta), 2.4W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Description: MOSFET P-CH 20V 2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2A, 4.5V
Power Dissipation (Max): 375mW (Ta), 2.4W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 41+ | 0.51 EUR |
| 57+ | 0.37 EUR |
| 100+ | 0.32 EUR |