Weitere Produktangebote PMGD780SN.115 nach Preis ab 0.11 EUR bis 1.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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PMGD780SN,115 | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 60V 0.49A 6TSSOPPart Status: Not For New Designs Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V Current - Continuous Drain (Id) @ 25°C: 490mA Drain to Source Voltage (Vdss): 60V Power - Max: 410mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | Nexperia |
MOSFETs PMGD780SN/SOT363/SC-88 |
auf Bestellung 31889 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD780SN,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.49A 6TSSOP Part Status: Not For New Designs Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V Current - Continuous Drain (Id) @ 25°C: 490mA Drain to Source Voltage (Vdss): 60V Power - Max: 410mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 23286 Stücke: Lieferzeit 10-14 Tag (e) |
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PMGD780SN,115 | NEXPERIA |
Description: NEXPERIA - PMGD780SN,115 - Dual-MOSFET, n-Kanal, 60 V, 300 mA, 0.78 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.78ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 410mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 17998 Stücke: Lieferzeit 14-21 Tag (e) |
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PMGD780SN,115 | NEXPERIA |
Description: NEXPERIA - PMGD780SN,115 - Dual-MOSFET, n-Kanal, 60 V, 300 mA, 0.78 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.78ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 410mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 17998 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMGD780SN,115 |
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auf Bestellung 29688 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PMGD780SN,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.49A 6TSSOP
Part Status: Not For New Designs
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 490mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 410mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 0.49A 6TSSOP
Part Status: Not For New Designs
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 490mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 410mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| 21000+ | 0.11 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 15000+ | 0.12 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 54000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 395+ | 0.44 EUR |
| 555+ | 0.31 EUR |
| 660+ | 0.25 EUR |
| 812+ | 0.2 EUR |
| 1205+ | 0.13 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
Trans MOSFET N-CH 60V 0.49A 6-Pin TSSOP T/R
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 327+ | 0.54 EUR |
| 406+ | 0.42 EUR |
| 454+ | 0.36 EUR |
| 607+ | 0.26 EUR |
| 708+ | 0.21 EUR |
| 854+ | 0.17 EUR |
| 1185+ | 0.12 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia
MOSFETs PMGD780SN/SOT363/SC-88
MOSFETs PMGD780SN/SOT363/SC-88
auf Bestellung 31889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.74 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
| PMGD780SN,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.49A 6TSSOP
Part Status: Not For New Designs
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 490mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 410mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.49A 6TSSOP
Part Status: Not For New Designs
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 490mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 410mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 23286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 55+ | 0.39 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.2 EUR |
| PMGD780SN,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PMGD780SN,115 - Dual-MOSFET, n-Kanal, 60 V, 300 mA, 0.78 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 300mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.78ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 410mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - PMGD780SN,115 - Dual-MOSFET, n-Kanal, 60 V, 300 mA, 0.78 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 300mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.78ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 410mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 17998 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 191+ | 1.31 EUR |
| 402+ | 0.58 EUR |
| 622+ | 0.35 EUR |
| 633+ | 0.33 EUR |
| 1500+ | 0.29 EUR |
| PMGD780SN,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PMGD780SN,115 - Dual-MOSFET, n-Kanal, 60 V, 300 mA, 0.78 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 300mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.78ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 410mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - PMGD780SN,115 - Dual-MOSFET, n-Kanal, 60 V, 300 mA, 0.78 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 300mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.78ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 410mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 17998 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 191+ | 1.31 EUR |
| 402+ | 0.58 EUR |
| 622+ | 0.35 EUR |
| 633+ | 0.33 EUR |
| 1500+ | 0.29 EUR |
| PMGD780SN,115 |
|
auf Bestellung 29688 Stücke:
Lieferzeit 21-28 Tag (e)