auf Bestellung 3170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.72 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
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Technische Details PMN120ENEAX Nexperia
Description: MOSFET N-CH 60V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 123mOhm @ 2.5A, 10V, Power Dissipation (Max): 670mW (Ta), 7.5W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMN120ENEAX nach Preis ab 0.34 EUR bis 0.88 EUR
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PMN120ENEAX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 2.5A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.5A, 10V Power Dissipation (Max): 670mW (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4982 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN120ENEAX | Hersteller : NEXPERIA |
P-Channel Trench MOSFET |
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PMN120ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 2.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.5A, 10V Power Dissipation (Max): 670mW (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |