PMN20ENAX

PMN20ENAX Nexperia USA Inc.


PMN20ENA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 6.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V
Power Dissipation (Max): 652mW (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMN20ENAX Nexperia USA Inc.

Description: MOSFET N-CH 40V 6.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V, Power Dissipation (Max): 652mW (Ta), 7.5W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote PMN20ENAX nach Preis ab 0.27 EUR bis 0.81 EUR

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PMN20ENAX PMN20ENAX Hersteller : Nexperia USA Inc. PMN20ENA.pdf Description: MOSFET N-CH 40V 6.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V
Power Dissipation (Max): 652mW (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
27+0.66 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.27 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PMN20ENAX Hersteller : NEXPERIA PMN20ENA.pdf Description: NEXPERIA - PMN20ENAX - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 6232 Stücke:
Lieferzeit 14-21 Tag (e)
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PMN20ENAX Hersteller : NEXPERIA pmn20ena.pdf 40 V, N-channel Trench MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PMN20ENAX Hersteller : NEXPERIA PMN20ENA.pdf PMN20ENAX SMD N channel transistors
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