auf Bestellung 3843 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
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Technische Details PMN230ENEAX Nexperia
Description: MOSFET N-CH 60V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V, Power Dissipation (Max): 625mW (Ta), 5.4W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMN230ENEAX nach Preis ab 0.28 EUR bis 0.72 EUR
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PMN230ENEAX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 1.8A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V Power Dissipation (Max): 625mW (Ta), 5.4W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5886 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN230ENEAX | Hersteller : NEXPERIA |
60 V, N-channel Trench MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMN230ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V Power Dissipation (Max): 625mW (Ta), 5.4W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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