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PMN230ENEAX

PMN230ENEAX Nexperia USA Inc.


PMN230ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta), 5.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMN230ENEAX Nexperia USA Inc.

Description: MOSFET N-CH 60V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V, Power Dissipation (Max): 625mW (Ta), 5.4W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PMN230ENEAX nach Preis ab 0.092 EUR bis 0.64 EUR

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PMN230ENEAX PMN230ENEAX Hersteller : Nexperia USA Inc. PMN230ENEA.pdf Description: MOSFET N-CH 60V 1.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta), 5.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
59+0.3 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
PMN230ENEAX PMN230ENEAX Hersteller : Nexperia PMN230ENEA-2938814.pdf MOSFETs PMN230ENEA/SOT457/SC-74
auf Bestellung 4911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.39 EUR
100+0.18 EUR
1000+0.16 EUR
3000+0.092 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PMN230ENEAX PMN230ENEAX Hersteller : NEXPERIA pmn230enea.pdf 60 V, N-channel Trench MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PMN230ENEAX Hersteller : NEXPERIA PMN230ENEA.pdf PMN230ENEAX SMD N channel transistors
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