PMN23UN,135 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 20V 6.3A 6TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 11649 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2219+ | 0.34 EUR |
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Technische Details PMN23UN,135 NXP USA Inc.
Description: MOSFET N-CH 20V 6.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.75W (Tc), Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Supplier Device Package: SC-74, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V.
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PMN23UN,135 | Hersteller : NXP Semiconductors |
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PMN23UN,135 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 20V 6.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Supplier Device Package: SC-74 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V |
Produkt ist nicht verfügbar |