auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.35 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
Produktrezensionen
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Technische Details PMN30XPEX Nexperia
Description: MOSFET P-CH 20V 5.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V, Power Dissipation (Max): 560mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V.
Weitere Produktangebote PMN30XPEX nach Preis ab 0.24 EUR bis 0.83 EUR
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PMN30XPEX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 5.3A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V Power Dissipation (Max): 560mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V |
auf Bestellung 2699 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN30XPEX | Hersteller : Nexperia |
20 V, P-channel Trench MOSFET |
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PMN30XPEX | Hersteller : NEXPERIA |
20 V, P-channel Trench MOSFET |
Produkt ist nicht verfügbar |
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PMN30XPEX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN30XPEX | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V Power Dissipation (Max): 560mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V |
Produkt ist nicht verfügbar |
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PMN30XPEX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |