PMN35EN,125 Nexperia

Description: MOSFET N-CH 30V 5.1A 6TSOP, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 15 V, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).